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TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 40V 40V * Same as SOT-89.
RDS(ON) (max) 1.8 2.0
VGS(th) (max) 1.6V 1.6V
ID(ON) (min) 2.0A 2.0A
Order Number / Package TO-92 TN0104N3 -- TO-243AA* -- TN0104N8 Die TN0104ND --
Product supplied on 2000 piece carrier tape reels. MIL visual screening available
7
Product marking for TO-243AA:
Features
Low threshold --1.6V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
TN1L*
Where *=2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds. 7-31 BVDSS BVDGS 20V -55C to +150C 300C
D G D S
TO-243AA (SOT-89)
SGD
TO-92
Note: See Package Outline section for dimensions.
TN0104
Thermal Characteristics
Package TO-92 TO-243AA
ID (continuous)* 0.80A 1.40A
ID (pulsed) 2.40A 2.90A
Power Dissipation @ TC = 25C 1.0W 1.6W
C/W
125 15
jc
C/W
170 78
ja
IDR* 0.80A 1.40A
IDRM 2.40A 2.90A
* ID (continuous) is limited by max rated Tj.
TA = 25C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant P D increase possible on ceramic substrate.
Electrical Characteristics
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage
(@ 25C unless otherwise specified)
Min 40 0.6 -3.8 0.1 1.6 -5.0 100 1 100 Typ Max Unit V V mV/C nA A A Conditions VGS= 0V, ID = 1.0mA VGS = VDS, ID = 500A VGS = VDS, ID = 1.0mA VGS = 20V, VDS = 0V VGS =0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 3V, VDS = 20V A VGS = 5V, VDS = 20V VGS = 10V, VDS = 20V VGS = 3V, ID = 50mA 2.5 1.8 2.0 0.7 0.34 0.45 70 50 15 3.0 7.0 6.0 5.0 5.0 8.0 9.0 8.0 1.8 2.0 300 V ns VGS = 0V, ISD = 1.0A VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 1A ns VDD = 20V, ID = 1A RGEN = 25 pF VGS = 0V, VDS = 20V f = 1 MHz 1.0 %/C VGS = 5V, ID = 250mA VGS = 10V, ID = 1A VGS = 10V, ID = 1A VGS =10V, ID = 1A, VDS = 20V, ID = 0.5A
Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current
ID(ON)
ON-State Drain Current 0.5 2.0
0.35 1.1 2.6 5.0 All Packages TO-92 TO-243AA 2.3 1.5
RDS(ON)
Static Drain-to-Source ON-State Resistance
RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr
Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time TO-92 TO-243AA
1.2
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF D.U.T. 10% 10% INPUT PULSE GENERATOR Rgen RL OUTPUT
7-32
TN0104
Typical Performance Curves
Output Characteristics
3.75 3.75
Saturation Characteristics
3.0
VGS = 10V
3.0
ID (amperes)
8V 1.5 6V
ID (amperes)
2.25
2.25
VGS = 10V 8V
1.5
6V
0.75
4V
0.75
4V
0 0 10 20 30
2V 0 40 50 0 2 4 6 8
2V 10
VDS (volts) Transconductance vs. Drain Current
0.75 5
VDS (volts) Power Dissipation vs. Case Temperature
7
VDS = -25V 25V
0.60
TA = -55 C
4
GFS (siemens)
TA = 125 C
0.30
PD (watts)
0.45
TA = 25 C
3
2
TO-243AA (T A = 25C) TO-92
0.15
1
0 0 0.5 1.0 1.5 2.0 2.5
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
10 1.0
TC ( C) Thermal Response Characteristics
TO-243AA TA = 25C PD = 1.6W
Thermal Resistance (normalized)
0.8
TO-39 (DC)
ID (amperes)
1.0
TO-92 (DC) TO-243AA (DC) (T A = 25C)
0.6
0.4
0.1
0.2
0.01 0.1 1 10 100
TO-92 P D = 1W T C = 25C
0.01 0.1 1 10
0 0.001
VDS (volts)
tp (seconds)
7-33
TN0104
Typical Performance Curves
BVDSS Variation with Temperature
1.3 10
On-Resistance vs. Drain Current
V GS = 5V
1.2 8
BVDSS (normalized)
RDS(ON) (ohms)
1.1
6
1.0
4
VGS = 10V
0.9
2
0.8 -50 0 50 100 150
0 0 1 2
Tj ( C) Transfer Characteristics
3.0
ID (amperes) V(th) and RDS Variation with Temperature
1.4 1.4
TA = -55 C
VDS = 25V
2.4
25 C
1.2 1.2
1.8
125 C
1.0
RDS(ON) @ 5V, 0.25A
1.0
1.2
0.8
V(th) @ 0.5mA
0.8
0.6
0.6
0.6
0
0.4 0 2 4 6 8 10 -50 0 50 100 150
0.4
VGS (volts) Capacitance vs. Drain-to-Source Voltage
100 10
Tj ( C) Gate Drive Dynamic Characteristics
VDS = 10V
8
f = 1MHz
75
55pF
C (picofarads)
VGS (volts)
40V
6
CISS
50
4
25
COSS
2
CRSS
0 0 10 20 30 40 0 0.5 0.65
50pF
0.8 0.95 1.1 1.25
VDS (volts)
QG (nanocoulombs)
7-34
RDS(ON) (normalized)
VGS(th) (normalized)
ID (amperes)

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